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BS108
Preferred Device
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
N-Channel TO-92
This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers.
Features http://onsemi.com
250 mAMPS 200 VOLTS RDS(on) = 8 W
N-Channel D
* Low Drive Requirement, VGS = 3.0 V max * Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices
* Pb-Free Packages are Available*
G
MAXIMUM RATINGS
Rating Drain -Source Voltage Gate-Source Voltage Drain Current Continuous (Note 1) Pulsed (Note 2) Total Power Dissipation @ TA = 25C Derate above TA = 25C Operating and Storage Temperature Range Symbol VDSS VGS ID IDM PD 350 6.4 TJ, Tstg -55 to +150 mW mW/C C
1 2 3
S Value 200 20 250 500 BS108 AYWW G G Unit Vdc Vdc mAdc
MARKING DIAGRAM
TO-92 CASE 29-11 STYLE 30
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
BS108 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device BS108 BS108G BS108ZL1 BS108ZL1G Package TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) Shipping 1000 Units/Box 1000 Units/Box 2000/Ammo Pack 2000/Ammo Pack
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2006
1
February, 2006 - Rev. 2
Publication Order Number: BS108/D
BS108
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDSS = 130 Vdc, VGS = 0) Gate-Body Leakage Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (ID = 1.0 mA, VDS = VGS) Static Drain-to-Source On-Resistance (VGS = 2.0 Vdc, ID = 50 mA) (VGS = 2.8 Vdc, ID = 100 mA) Drain Cutoff Current (VGS = 0.2 V, VDS = 70 V) Forward Transconductance (ID = 120 mA, VDS = 20 V) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn-On Time (See Figure 1) Turn-Off Time (See Figure 1) 3. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. td(on) td(off) - - - - 15 15 ns ns Ciss - Coss - Crss - - 10 - 30 pF - 150 pF pF VGS(th) 0.5 rDS(on) - - IDSX - gFS - 0.33 - - 25 Mhos - - 10 8.0 mA - 1.5 W Vdc V(BR)DS 200 IDSS - IGSSF - - 10 - 30 nAdc - - - Vdc nAdc Symbol Min Typ Max Unit
RESISTIVE SWITCHING
+25 V 23 PULSE GENERATOR Vin 40 pF 50 50 1.0 M 20 dB 50 W ATTENUATOR TO SAMPLING SCOPE 50 W INPUT Vout ton 90% toff 90% 10% 90% 10 V INPUT Vin 50% 10% PULSE WIDTH 50%
OUTPUT V INVERTED out
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
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BS108
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
K
XX G H V
1
D J C SECTION X-X N N
STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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BS108/D

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